Optimization of Growth Process and Structural Characterization of Nanoscale Compound Semiconductor Heterostructures

( Vol-11,Issue-1,January - February 2025 )

Author(s): Jayprakash Vijay, Divya Bharadwaj

Download Full Text PDF
Download with Cover Page Total View : 660
Downloads : 11
Page No: 177-180
DOI: 10.22161/ijaems.111.13

Keywords:

MBE, Quantum well, Heterostructure, Compound Semiconductor.

Abstract:

This study focuses on optimizing the process sequence for fabricating a double quantum well structure composed of the compound materials AlAsSb/InGaAs/GaAsSb. The selection of optimized sequence parameters is guided by an extensive literature review on material properties, nanoscale engineering considerations, and molecular beam epitaxy (MBE) growth conditions. A key advantage of using heterostructures is the precise control over the thickness of individual material layers, which is crucial for device fabrication. To ensure uniform epitaxial growth of the ternary compounds AlAsSb, InGaAs, and GaAsSb, a slow deposition rate of 0.5 micrometers per hour is maintained during the MBE process.

Received: 19 Jan 2025; Received in revised form: 17 Feb 2025; Accepted: 22 Feb 2025; Available online: 27 Feb 2025

Cite This Article:

Share: